elektronische bauelemente SSP7492N 6.2a, 150v, r ds(on) 88 m ? n-channel enhancement mosfet 18-sep-2013 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8pp saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leader size sop-8pp 3k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v t a =25c 6.2 continuous drain current 1 t a =70c i d 5 a pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 6.7 a t a =25c 5 power dissipation 1 t a =70c p d 3.2 w operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance data t Q 10 sec 25 maximum junction to ambient 1 steady state r ja 65 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 0.85 1.00 0 10 b 5.3 bsc. b 5.2 bcs c 0.15 0.25 c 0.30 0.50 d 3.8 bcs. d 1.27bsc e 6.05 bcs. e 5.55 bcs. f 0.03 0.30 f 0.10 0.40 g 4.35 bcs. g 1.2 bcs. l 0.40 0.70 sop-8pp
elektronische bauelemente SSP7492N 6.2a, 150v, r ds(on) 88 m ? n-channel enhancement mosfet 18-sep-2013 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) paramete r s y mbol min t y p max unit test condition static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - 1 v ds =120v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =120v, v gs =0,t j =55c on-state drain current 1 i d(on) 15 - - a v ds =5v, v gs =10v - - 88 v gs =10v, i d =5a drain-source on-resistance 1 r ds(on) - - 96 m ? v gs =5.5v, i d =4a forward transconductance 1 g fs - 32 - s v ds =15v, , i d =5a diode forward voltage 1 v sd - 0.75 - v i s =3.4a, v gs =0 dynamic 2 total gate charge q g - 23 - gate-source charge q gs - 7.4 - gate-drain charge q gd - 9 - nc i d =5a v ds =75v v gs =5.5v turn-on delay time td (on) - 14 - rise time t r - 15 - turn-off delay time td (off) - 70 - fall time t f - 31 - ns i d =5a, v ds =75v v gen =10v r l =15 ? , r gen =6 ? input capacitance c iss - 2599 - output capacitance c oss - 167 - reverse transfer capacitance c rss - 90 - pf v ds =15v, v gs =0, f=1mhz notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SSP7492N 6.2a, 150v, r ds(on) 88 m ? n-channel enhancement mosfet 18-sep-2013 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics curve
elektronische bauelemente SSP7492N 6.2a, 150v, r ds(on) 88 m ? n-channel enhancement mosfet 18-sep-2013 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics curve
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